Electrical overstress (EOS) and Electrostatic discharge (ESD) pose one of the most dominant threats to integrated circuits (ICs). These reliability concerns are becoming more serious with… Altro …
Electrical overstress (EOS) and Electrostatic discharge (ESD) pose one of the most dominant threats to integrated circuits (ICs). These reliability concerns are becoming more serious with the downward scaling of device feature sizes. Modeling of Electrical Overstress in Integrated Circuits presents a comprehensive analysis of EOS/ESD-related failures in I/O protection devices in integrated circuits. The design of I/O protection circuits has been done in a hit-or-miss way due to the lack of systematic analysis tools and concrete design guidelines. In general, the development of on-chip protection structures is a lengthy expensive iterative process that involves tester design, fabrication, testing and redesign. When the technology is changed, the same process has to be repeated almost entirely. This can be attributed to the lack of efficient CAD tools capable of simulating the device behavior up to the onset of failure which is a 3-D electrothermal problem. For these reasons, it is important to develop and use an adequate measure of the EOS robustness of integrated circuits in order to address the on-chip EOS protection issue. Fundamental understanding of the physical phenomena leading to device failures under ESD/EOS events is needed for the development of device models and CAD tools that can efficiently describe the device behavior up to the onset of thermal failure. Modeling of Electrical Overstress in Integrated Circuits is for VLSI designers and reliability engineers, particularly those who are working on the development of EOS/ESD analysis tools. CAD engineers working on development of circuit level and device level electrothermal simulators will also benefit from the material covered. This book will also be of interest to researchers and first and second year graduate students working in semiconductor devices and IC reliability fields. | Modeling of Electrical Overstress in Integrated Circuits by Carlos H. Diaz Hardcover | Indigo Chapters Books > Science & Nature > Science > Technology > Electronics P10117, Carlos H. Diaz<
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Electrical overstress (EOS) and Electrostatic discharge (ESD) pose one of the most dominant threats to integrated circuits (ICs). These reliability concerns are becoming more serious wi… Altro …
Electrical overstress (EOS) and Electrostatic discharge (ESD) pose one of the most dominant threats to integrated circuits (ICs). These reliability concerns are becoming more serious with the downward scaling of device feature sizes. Modeling of Electrical Overstress in Integrated Circuits presents a comprehensive analysis of EOS/ESD-related failures in I/O protection devices in integrated circuits. The design of I/O protection circuits has been done in a hit-or-miss way due to the lack of systematic analysis tools and concrete design guidelines. In general, the development of on-chip protection structures is a lengthy expensive iterative process that involves tester design, fabrication, testing and redesign. When the technology is changed, the same process has to be repeated almost entirely. This can be attributed to the lack of efficient CAD tools capable of simulating the device behavior up to the onset of failure which is a 3-D electrothermal problem. For these reasons, it is important to develop and use an adequate measure of the EOS robustness of integrated circuits in order to address the on-chip EOS protection issue. Fundamental understanding of the physical phenomena leading to device failures under ESD/EOS events is needed for the development of device models and CAD tools that can efficiently describe the device behavior up to the onset of thermal failure. Modeling of Electrical Overstress in Integrated Circuits is for VLSI designers and reliability engineers, particularly those who are working on the development of EOS/ESD analysis tools. CAD engineers working on development of circuit level and device level electrothermal simulators will also benefit from the material covered. This book will also be of interest to researchers and first and second year graduate students working in semiconductor devices and IC reliability fields. Books > Science & Nature > Science > Technology > Electrical List_Books, [PU: Kluwer Academic Publishers]<
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(*) Libro esaurito significa che il libro non è attualmente disponibile in una qualsiasi delle piattaforme associate che di ricerca.
Electrical overstress (EOS) and Electrostatic discharge (ESD) pose one of the most dominant threats to integrated circuits (ICs). These reliability concerns are becoming more serious with… Altro …
Electrical overstress (EOS) and Electrostatic discharge (ESD) pose one of the most dominant threats to integrated circuits (ICs). These reliability concerns are becoming more serious with the downward scaling of device feature sizes. Modeling of Electrical Overstress in Integrated Circuits presents a comprehensive analysis of EOS/ESD-related failures in I/O protection devices in integrated circuits. The design of I/O protection circuits has been done in a hit-or-miss way due to the lack of systematic analysis tools and concrete design guidelines. In general, the development of on-chip protection structures is a lengthy expensive iterative process that involves tester design, fabrication, testing and redesign. When the technology is changed, the same process has to be repeated almost entirely. This can be attributed to the lack of efficient CAD tools capable of simulating the device behavior up to the onset of failure which is a 3-D electrothermal problem. For these reasons, it is important to develop and use an adequate measure of the EOS robustness of integrated circuits in order to address the on-chip EOS protection issue. Fundamental understanding of the physical phenomena leading to device failures under ESD/EOS events is needed for the development of device models and CAD tools that can efficiently describe the device behavior up to the onset of thermal failure. Modeling of Electrical Overstress in Integrated Circuits is for VLSI designers and reliability engineers, particularly those who are working on the development of EOS/ESD analysis tools. CAD engineers working on development of circuit level and device level electrothermal simulators will also benefit from the material covered. This book will also be of interest to researchers and first and second year graduate students working in semiconductor devices and IC reliability fields., Springer<
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Electrical overstress (EOS) and Electrostatic discharge (ESD) pose one of the most dominant threats to integrated circuits (ICs). These reliability concerns are becoming more serious with… Altro …
Electrical overstress (EOS) and Electrostatic discharge (ESD) pose one of the most dominant threats to integrated circuits (ICs). These reliability concerns are becoming more serious with the downward scaling of device feature sizes. Modeling of Electrical Overstress in Integrated Circuits presents a comprehensive analysis of EOS/ESD-related failures in I/O protection devices in integrated circuits. The design of I/O protection circuits has been done in a hit-or-miss way due to the lack of systematic analysis tools and concrete design guidelines. In general, the development of on-chip protection structures is a lengthy expensive iterative process that involves tester design, fabrication, testing and redesign. When the technology is changed, the same process has to be repeated almost entirely. This can be attributed to the lack of efficient CAD tools capable of simulating the device behavior up to the onset of failure which is a 3-D electrothermal problem. For these reasons, it is important to develop and use an adequate measure of the EOS robustness of integrated circuits in order to address the on-chip EOS protection issue. Fundamental understanding of the physical phenomena leading to device failures under ESD/EOS events is needed for the development of device models and CAD tools that can efficiently describe the device behavior up to the onset of thermal failure. Modeling of Electrical Overstress in Integrated Circuits is for VLSI designers and reliability engineers, particularly those who are working on the development of EOS/ESD analysis tools. CAD engineers working on development of circuit level and device level electrothermal simulators will also benefit from the material covered. This book will also be of interest to researchers and first and second year graduate students working in semiconductor devices and IC reliability fields. | Modeling of Electrical Overstress in Integrated Circuits by Carlos H. Diaz Hardcover | Indigo Chapters Books > Science & Nature > Science > Technology > Electronics P10117, Carlos H. Diaz<
new in stock. Costi di spedizione:zzgl. Versandkosten., Costi di spedizione aggiuntivi
Electrical overstress (EOS) and Electrostatic discharge (ESD) pose one of the most dominant threats to integrated circuits (ICs). These reliability concerns are becoming more serious wi… Altro …
Electrical overstress (EOS) and Electrostatic discharge (ESD) pose one of the most dominant threats to integrated circuits (ICs). These reliability concerns are becoming more serious with the downward scaling of device feature sizes. Modeling of Electrical Overstress in Integrated Circuits presents a comprehensive analysis of EOS/ESD-related failures in I/O protection devices in integrated circuits. The design of I/O protection circuits has been done in a hit-or-miss way due to the lack of systematic analysis tools and concrete design guidelines. In general, the development of on-chip protection structures is a lengthy expensive iterative process that involves tester design, fabrication, testing and redesign. When the technology is changed, the same process has to be repeated almost entirely. This can be attributed to the lack of efficient CAD tools capable of simulating the device behavior up to the onset of failure which is a 3-D electrothermal problem. For these reasons, it is important to develop and use an adequate measure of the EOS robustness of integrated circuits in order to address the on-chip EOS protection issue. Fundamental understanding of the physical phenomena leading to device failures under ESD/EOS events is needed for the development of device models and CAD tools that can efficiently describe the device behavior up to the onset of thermal failure. Modeling of Electrical Overstress in Integrated Circuits is for VLSI designers and reliability engineers, particularly those who are working on the development of EOS/ESD analysis tools. CAD engineers working on development of circuit level and device level electrothermal simulators will also benefit from the material covered. This book will also be of interest to researchers and first and second year graduate students working in semiconductor devices and IC reliability fields. Books > Science & Nature > Science > Technology > Electrical List_Books, [PU: Kluwer Academic Publishers]<
new in stock. Costi di spedizione:zzgl. Versandkosten., Costi di spedizione aggiuntivi
Electrical overstress (EOS) and Electrostatic discharge (ESD) pose one of the most dominant threats to integrated circuits (ICs). These reliability concerns are becoming more serious with… Altro …
Electrical overstress (EOS) and Electrostatic discharge (ESD) pose one of the most dominant threats to integrated circuits (ICs). These reliability concerns are becoming more serious with the downward scaling of device feature sizes. Modeling of Electrical Overstress in Integrated Circuits presents a comprehensive analysis of EOS/ESD-related failures in I/O protection devices in integrated circuits. The design of I/O protection circuits has been done in a hit-or-miss way due to the lack of systematic analysis tools and concrete design guidelines. In general, the development of on-chip protection structures is a lengthy expensive iterative process that involves tester design, fabrication, testing and redesign. When the technology is changed, the same process has to be repeated almost entirely. This can be attributed to the lack of efficient CAD tools capable of simulating the device behavior up to the onset of failure which is a 3-D electrothermal problem. For these reasons, it is important to develop and use an adequate measure of the EOS robustness of integrated circuits in order to address the on-chip EOS protection issue. Fundamental understanding of the physical phenomena leading to device failures under ESD/EOS events is needed for the development of device models and CAD tools that can efficiently describe the device behavior up to the onset of thermal failure. Modeling of Electrical Overstress in Integrated Circuits is for VLSI designers and reliability engineers, particularly those who are working on the development of EOS/ESD analysis tools. CAD engineers working on development of circuit level and device level electrothermal simulators will also benefit from the material covered. This book will also be of interest to researchers and first and second year graduate students working in semiconductor devices and IC reliability fields., Springer<
Nr. 978-0-7923-9505-8. Costi di spedizione:Worldwide free shipping, , DE. (EUR 0.00)
Modeling of Electrical Overstress in Integrated Circuits ab 181.99 € als gebundene Ausgabe: Auflage 1995. Aus dem Bereich: Bücher, Wissenschaft, Technik, Medien > Bücher, Springer US
Nr. 4044454. Costi di spedizione:, , DE. (EUR 0.00)
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Electrical overstress (EOS) and Electrostatic discharge (ESD) pose one of the most dominant threats to integrated circuits (ICs). These reliability concerns are becoming more serious with the downward scaling of device feature sizes. Modeling of Electrical Overstress in Integrated Circuits presents a comprehensive analysis of EOS/ESD-related failures in I/O protection devices in integrated circuits. The design of I/O protection circuits has been done in a hit-or-miss way due to the lack of systematic analysis tools and concrete design guidelines. In general, the development of on-chip protection structures is a lengthy expensive iterative process that involves tester design, fabrication, testing and redesign. When the technology is changed, the same process has to be repeated almost entirely. This can be attributed to the lack of efficient CAD tools capable of simulating the device behavior up to the onset of failure which is a 3-D electrothermal problem. For these reasons, it is important to develop and use an adequate measure of the EOS robustness of integrated circuits in order to address the on-chip EOS protection issue. Fundamental understanding of the physical phenomena leading to device failures under ESD/EOS events is needed for the development of device models and CAD tools that can efficiently describe the device behavior up to the onset of thermal failure. Modeling of Electrical Overstress in Integrated Circuits is for VLSI designers and reliability engineers, particularly those who are working on the development of EOS/ESD analysis tools. CAD engineers working on development of circuit level and device level electrothermal simulators will also benefit from the material covered. This book will also be of interest to researchers and first and second year graduate students working in semiconductor devices and IC reliability fields.
Informazioni dettagliate del libro - Modeling of Electrical Overstress in Integrated Circuits by Carlos H. Diaz Hardcover | Indigo Chapters
EAN (ISBN-13): 9780792395058 ISBN (ISBN-10): 0792395050 Copertina rigida Anno di pubblicazione: 1994 Editore: Carlos H. Diaz 178 Pagine Peso: 0,438 kg Lingua: eng/Englisch
Libro nella banca dati dal 2007-11-06T18:07:32+01:00 (Zurich) Pagina di dettaglio ultima modifica in 2023-09-27T13:01:24+02:00 (Zurich) ISBN/EAN: 0792395050
ISBN - Stili di scrittura alternativi: 0-7923-9505-0, 978-0-7923-9505-8 Stili di scrittura alternativi e concetti di ricerca simili: Autore del libro : carlos, diaz diaz, kim sung, kang Titolo del libro: modeling electrical overstress integrated circuits, integrated science, springer
Dati dell'editore
Autore: Carlos H. Diaz; Sung-Mo (Steve) Kang; Charvaka Duvvury Titolo: The Springer International Series in Engineering and Computer Science; Modeling of Electrical Overstress in Integrated Circuits Editore: Springer; Springer US 148 Pagine Anno di pubblicazione: 1994-11-30 New York; NY; US Lingua: Inglese 160,49 € (DE) 164,99 € (AT) 177,00 CHF (CH) Available XXV, 148 p.
BB; Hardcover, Softcover / Technik/Elektronik, Elektrotechnik, Nachrichtentechnik; Schaltkreise und Komponenten (Bauteile); Verstehen; VLSI; development; integrated circuit; material; modeling; semiconductor; semiconductor devices; simulation; tables; testing; Electronic Circuits and Systems; Electrical and Electronic Engineering; Elektrotechnik; BC
1 Electrical Overstress in ICS.- 1.1 Definition of Electrostatic Discharge Phenomena.- 1.2 Impact of ESD on IC Chip Technologies.- 1.3 Protection Strategies for Reducing ESD Effects.- 1.4 ESD Models and Qualification.- 1.5 EOS Models and Qualification.- 1.6 Previous Work on ESD/EOS Device Failure Modeling.- 2 NMOS ESD Protection Devices and Process Related Issues.- 2.1 ESD Phenomena in nMOS Devices.- 2.2 Failure Modes in nMOS.- 2.3 Protection Technique Using nMOS Device Structures.- 2.4 The Impact of Process Technologies on nMOS ESD Behavior.- 2.5 Advance nMOS Device Protection Concepts.- 3 Measuring EOS Robustness in ICS.- 3.1 Statistical Distribution of EOS/ESD-related Failures.- 3.2 Characterization of Bipolar Devices.- 3.3 EOS Characterization of nMOS Devices.- 3.4 Summary.- 4 Eos Thermal Failure Simulation for Integrated Circuits.- 4.1 Nomenclature.- 4.2 ITSIM: A Nonlinear Thermal Failure Simulator for ICs.- 4.3 Simulation Results for Ceramic and Plastic Packages.- 4.4 Summary.- 5 ITSIM: A Nonlinear 2D - 1D Thermal Simulator.- 5.1 Introduction.- 5.2 Running the Program.- 5.3 Input File.- 5.4 An Example.- 6 2D Electrothermal Analysis of Device Failure in Mos Processes.- 6.1 Device Level Electrothermal Simulation.- 6.2 Comparison of Experimental and 2D Electrothermal Results.- 6.3 Summary.- 7 Circuit-Level Electrothermal Simulation.- 7.1 Temperature Effects and Device Models.- 7.2 Simulation of Avalanche Breakdown.- 7.3 Temperature Model for Electrothermal Simulation.- 7.4 iETSIM: An Electrothermal Circuit-Level Simulation Tool.- 7.5 Summary.- 8 IETSIM : An Electrothermal Circuit Simulator.- 8.1 Introduction.- 8.2 Running the Program.- 8.3 Input File: Circuit Description and Format.- 8.4 Low Temperature Thermometer Example.- 9 Summary and Future Research.- 9.1 Summary.- 9.2 Future Research.- About the Authors.
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