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Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices - Timm Höhr

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Timm Höhr:
Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices - edizione con copertina flessibile

ISBN: 3866280874

[SR: 3286698], Taschenbuch, [EAN: 9783866280878], Hartung-Gorre, Hartung-Gorre, Book, [PU: Hartung-Gorre], Hartung-Gorre, Based on simulations with the device simulator DESSIS_ISE, this work investigates implications of quantization on the modeling of three kinds of transport effects in MOS devices. The first part deals with the question to what extend tunneling currents through insulating barriers can be described within the quantum drift-diffusion model. The second part introduces and investigates a consistent way of modeling Shockley-Read-Hall recombination in the presence of quantization. The third part describes a model for the drift mobility in MOS channels. Special emphasis is put on the influence of remote Coulomb scattering by impurities in the polysilicon gate electrode. Keywords: semiconductor device modeling, quantum transport, tunneling effect, Shockley-Read-Hall recombination, drift mobility, density gradient model, recombination lifetime, remote Coulomb scattering, ultrathin gate oxide, quantum confinement, quantum effects, MOS diode, MOSFET, quantum drift-diffusion model, resonant tunneling, negative differential resistance, quantum well, inversion layer mobility., 54071011, Genres, 60447011, Architektur, Technik & Ingenieurswesen, 66034011, Belletristik, 56797011, Biografien & Erinnerungen, 58173011, Business, Karriere & Geld, 65981011, Comics, Mangas & Graphic Novels, 62991011, Computer & Internet, 54072011, Eltern & Familie, 56047011, Fachbücher, 57127011, Fantasy & Science Fiction, 65677011, Freizeit, Haus & Garten, 65140011, Geschichte, 64617011, Gesundheit, Geist & Körper, 59283011, Jugendbücher, 53817011, Kalender, 61180011, Kinderbücher, 64085011, Kochen & Genießen, 68333011, Krimis & Thriller, 59670011, Kunst & Fotografie, 54127011, Lernen & Nachschlagen, 55555011, Liebesromane & -erzählungen, 56535011, Medizin, 53965011, Musiknoten, 65108011, Outdoor, Umwelt & Natur, 63925011, Recht, 58645011, Reise & Abenteuer, 54682011, Religion & Esoterik, 69028011, Sachbücher, 65636011, Schwul & Lesbisch, 58390011, Sport & Fitness, 64226011, Unterhaltung & Kultur, 52044011, Fremdsprachige Bücher<

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Timm Höhr:
Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices - edizione con copertina flessibile

ISBN: 3866280874

[SR: 3630700], Taschenbuch, [EAN: 9783866280878], Hartung-Gorre, Hartung-Gorre, Book, [PU: Hartung-Gorre], Hartung-Gorre, Based on simulations with the device simulator DESSIS_ISE, this work investigates implications of quantization on the modeling of three kinds of transport effects in MOS devices. The first part deals with the question to what extend tunneling currents through insulating barriers can be described within the quantum drift-diffusion model. The second part introduces and investigates a consistent way of modeling Shockley-Read-Hall recombination in the presence of quantization. The third part describes a model for the drift mobility in MOS channels. Special emphasis is put on the influence of remote Coulomb scattering by impurities in the polysilicon gate electrode. Keywords: semiconductor device modeling, quantum transport, tunneling effect, Shockley-Read-Hall recombination, drift mobility, density gradient model, recombination lifetime, remote Coulomb scattering, ultrathin gate oxide, quantum confinement, quantum effects, MOS diode, MOSFET, quantum drift-diffusion model, resonant tunneling, negative differential resistance, quantum well, inversion layer mobility., 54071011, Genres, 60447011, Architektur, Technik & Ingenieurswesen, 66034011, Belletristik, 56797011, Biografien & Erinnerungen, 58173011, Business, Karriere & Geld, 65981011, Comics, Mangas & Graphic Novels, 62991011, Computer & Internet, 54072011, Eltern & Familie, 57127011, Fantasy & Science Fiction, 65677011, Freizeit, Haus & Garten, 65140011, Geschichte, 64617011, Gesundheit, Geist & Körper, 59283011, Jugendbücher, 53817011, Kalender, 61180011, Kinderbücher, 64085011, Kochen & Genießen, 68333011, Krimis & Thriller, 59670011, Kunst & Fotografie, 54127011, Lernen & Nachschlagen, 55555011, Liebesromane & -erzählungen, 56535011, Medizin, 53965011, Musiknoten, 65108011, Outdoor, Umwelt & Natur, 63925011, Recht, 58645011, Reise & Abenteuer, 54682011, Religion & Esoterik, 69028011, Sachbücher, 65636011, Schwul & Lesbisch, 58390011, Sport & Fitness, 64226011, Unterhaltung & Kultur, 56047011, Wissenschaft, 52044011, Fremdsprachige Bücher<

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Timm Höhr:
Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices - edizione con copertina flessibile

ISBN: 3866280874

[SR: 4092895], Taschenbuch, [EAN: 9783866280878], Hartung-Gorre, Hartung-Gorre, Book, [PU: Hartung-Gorre], Hartung-Gorre, Based on simulations with the device simulator DESSIS_ISE, this work investigates implications of quantization on the modeling of three kinds of transport effects in MOS devices. The first part deals with the question to what extend tunneling currents through insulating barriers can be described within the quantum drift-diffusion model. The second part introduces and investigates a consistent way of modeling Shockley-Read-Hall recombination in the presence of quantization. The third part describes a model for the drift mobility in MOS channels. Special emphasis is put on the influence of remote Coulomb scattering by impurities in the polysilicon gate electrode. Keywords: semiconductor device modeling, quantum transport, tunneling effect, Shockley-Read-Hall recombination, drift mobility, density gradient model, recombination lifetime, remote Coulomb scattering, ultrathin gate oxide, quantum confinement, quantum effects, MOS diode, MOSFET, quantum drift-diffusion model, resonant tunneling, negative differential resistance, quantum well, inversion layer mobility., 54071011, Genres, 60447011, Architektur, Technik & Ingenieurswesen, 66034011, Belletristik, 56797011, Biografien & Erinnerungen, 58173011, Business, Karriere & Geld, 65981011, Comics, Mangas & Graphic Novels, 62991011, Computer & Internet, 54072011, Eltern & Familie, 57127011, Fantasy & Science Fiction, 65677011, Freizeit, Haus & Garten, 65140011, Geschichte, 64617011, Gesundheit, Geist & Körper, 59283011, Jugendbücher, 53817011, Kalender, 61180011, Kinderbücher, 64085011, Kochen & Genießen, 68333011, Krimis & Thriller, 59670011, Kunst & Fotografie, 54127011, Lernen & Nachschlagen, 55555011, Liebesromane & -erzählungen, 56535011, Medizin, 53965011, Musiknoten, 65108011, Outdoor, Umwelt & Natur, 63925011, Recht, 58645011, Reise & Abenteuer, 54682011, Religion & Esoterik, 69028011, Sachbücher, 65636011, Schwul & Lesbisch, 58390011, Sport & Fitness, 64226011, Unterhaltung & Kultur, 56047011, Wissenschaft, 52044011, Fremdsprachige Bücher<

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Quantum-Mechanical Modeling of Transport Parameters for Mos Devices (Series in microelectronics) - Timm Höhr

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Timm Höhr:
Quantum-Mechanical Modeling of Transport Parameters for Mos Devices (Series in microelectronics) - edizione con copertina flessibile

ISBN: 3866280874

Paperback, [EAN: 9783866280878], Hartung-Gorre, Hartung-Gorre, Book, [PU: Hartung-Gorre], Hartung-Gorre, 1025612, Subjects, 349777011, Antiquarian, Rare & Collectable, 91, Art, Architectu… Altro …

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Timm Höhr:
Quantum-Mechanical Modeling of Transport Parameters for Mos Devices (Series in microelectronics) - edizione con copertina flessibile

ISBN: 3866280874

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Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices - edizione con copertina flessibile

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Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices - edizione con copertina flessibile

ISBN: 3866280874

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Timm Höhr:
Quantum-Mechanical Modeling of Transport Parameters for MOS-Devices - edizione con copertina flessibile

ISBN: 3866280874

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Timm Höhr:
Quantum-Mechanical Modeling of Transport Parameters for Mos Devices (Series in microelectronics) - edizione con copertina flessibile

ISBN: 3866280874

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Quantum-Mechanical Modeling of Transport Parameters for Mos Devices (Series in microelectronics) - edizione con copertina flessibile

ISBN: 3866280874

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Quantum-Mechanical Modeling of Transport Parameters for Mos Devices (Series in microelectronics)

Autore:	Timm Höhr
Titolo:	Quantum-Mechanical Modeling of Transport Parameters for Mos Devices (Series in microelectronics)
ISBN:	3866280874

Based on simulations with the device simulator DESSIS_ISE, this work investigates implications of quantization on the modeling of three kinds of transport effects in MOS devices. The first part deals with the question to what extend tunneling currents through insulating barriers can be described within the quantum drift-diffusion model. The second part introduces and investigates a consistent way of modeling Shockley-Read-Hall recombination in the presence of quantization. The third part describes a model for the drift mobility in MOS channels. Special emphasis is put on the influence of remote Coulomb scattering by impurities in the polysilicon gate electrode. Keywords: semiconductor device modeling, quantum transport, tunneling effect, Shockley-Read-Hall recombination, drift mobility, density gradient model, recombination lifetime, remote Coulomb scattering, ultrathin gate oxide, quantum confinement, quantum effects, MOS diode, MOSFET, quantum drift-diffusion model, resonant tunneling, negative differential resistance, quantum well, inversion layer mobility.

Informazioni dettagliate del libro - Quantum-Mechanical Modeling of Transport Parameters for Mos Devices (Series in microelectronics)

ISBN (ISBN-10): 3866280874 (ISBN-13: 9783866280878)
Copertina flessibile
Editore: Hartung-Gorre

Libro nella banca dati dal 2008-09-13T00:14:04+02:00 (Zurich)
Pagina di dettaglio ultima modifica in 2018-01-17T15:14:57+01:00 (Zurich)
ISBN/EAN: 3866280874

ISBN - Stili di scrittura alternativi:
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Autore del libro : timm

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