Fundamentals of Nanoscaled Field Effect Transistors / Amit Chaudhry / Buch / HC gerader Rücken kaschiert / XIV / Englisch / 2013 / Springer New York / EAN 9781461468219 - copertina rigida, flessible
2013, ISBN: 9781461468219
[ED: Gebunden], [PU: Springer New York], Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscal… Altro …
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Fundamentals of Nanoscaled Field Effect Transistors / Amit Chaudhry / Buch / HC gerader Rücken kaschiert / XIV / Englisch / 2013 / Springer New York / EAN 9781461468219 - copertina rigida, flessible
2013, ISBN: 9781461468219
[ED: Gebunden], [PU: Springer New York], Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscal… Altro …
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2023, ISBN: 9781461468219
[ED: Buch], [PU: Springer New York], Neuware - Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind na… Altro …
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2013, ISBN: 1461468213
2013 Gebundene Ausgabe Elektronik / Mikroelektronik, Mikroelektronik, Optik, Nanowissenschaften, Technische Anwendung von elektronischen, magnetischen, optischen Materialien, Elektronik… Altro …
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ISBN: 9781461468219
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Fundamentals of Nanoscaled Field Effect Transistors / Amit Chaudhry / Buch / HC gerader Rücken kaschiert / XIV / Englisch / 2013 / Springer New York / EAN 9781461468219 - copertina rigida, flessible
2013, ISBN: 9781461468219
[ED: Gebunden], [PU: Springer New York], Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscal… Altro …
Chaudhry, Amit:
Fundamentals of Nanoscaled Field Effect Transistors / Amit Chaudhry / Buch / HC gerader Rücken kaschiert / XIV / Englisch / 2013 / Springer New York / EAN 9781461468219 - copertina rigida, flessible2013, ISBN: 9781461468219
[ED: Gebunden], [PU: Springer New York], Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscal… Altro …
2023
ISBN: 9781461468219
[ED: Buch], [PU: Springer New York], Neuware - Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind na… Altro …
2013, ISBN: 1461468213
2013 Gebundene Ausgabe Elektronik / Mikroelektronik, Mikroelektronik, Optik, Nanowissenschaften, Technische Anwendung von elektronischen, magnetischen, optischen Materialien, Elektronik… Altro …
ISBN: 9781461468219
Hardback, [PU: Springer-Verlag New York Inc.], Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind na… Altro …
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Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.
Informazioni dettagliate del libro - Fundamentals of Nanoscaled Field Effect Transistors
EAN (ISBN-13): 9781461468219
ISBN (ISBN-10): 1461468213
Copertina rigida
Anno di pubblicazione: 2013
Editore: Springer-Verlag GmbH
201 Pagine
Peso: 0,464 kg
Lingua: Englisch
Libro nella banca dati dal 2008-11-24T03:58:44+01:00 (Zurich)
Pagina di dettaglio ultima modifica in 2024-01-13T18:07:55+01:00 (Zurich)
ISBN/EAN: 9781461468219
ISBN - Stili di scrittura alternativi:
1-4614-6821-3, 978-1-4614-6821-9
Stili di scrittura alternativi e concetti di ricerca simili:
Autore del libro : amit, chaudhry
Titolo del libro: the fundamentals, transistors, transistor, amit
Dati dell'editore
Autore: Amit Chaudhry
Titolo: Fundamentals of Nanoscaled Field Effect Transistors
Editore: Springer; Springer US
201 Pagine
Anno di pubblicazione: 2013-04-23
New York; NY; US
Stampato / Fatto in
Peso: 4,498 kg
Lingua: Inglese
106,99 € (DE)
109,99 € (AT)
118,00 CHF (CH)
POD
XIV, 201 p. 121 illus., 102 illus. in color.
BB; Electronics and Microelectronics, Instrumentation; Hardcover, Softcover / Technik/Elektronik, Elektrotechnik, Nachrichtentechnik; Elektronik; Verstehen; Ballistic Effect Devices; Biaxial Strained Si Technology; Compact MOSFET Models; Electron Devices; MOSFETs at Nanoscale; Nanoscale MOS Transistors; Nanoscale MOSFET; Transistor Quantum Effects; Electronic Circuits and Devices; Circuits and Systems; Nanoscale Science and Technology; Optical and Electronic Materials; Electronics and Microelectronics, Instrumentation; Electronic Circuits and Systems; Nanophysics; Optical Materials; Schaltkreise und Komponenten (Bauteile); Physik der kondensierten Materie (Flüssigkeits- und Festkörperphysik); Nanowissenschaften; Technische Anwendung von elektronischen, magnetischen, optischen Materialien; EA; BC
gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.
Fundamentals of Nanoscaled Field Effect TransistorsScaling of a MOS Transistor.- Nanoscale Effects- Gate Oxide Leakage Currents.- Nanoscale Effects- Inversion Layer Quantization.- Dielectrics for Nanoelectronics.- Germanium Technology.- Biaxial s-Si Technology.- Uniaxial s-Si Technology.- Alternate MOS Structures.- Graphene Technology.
gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.
In summary, this book:
Covers the fundamental principles behind nanoelectronics/microelectronics
Includes chapters devoted to solutions tackling the quantum mechanical effects occurring at nanoscale
Provides some case studies to understand the issue mathematically
is an ideal book for researchers and undergraduate and graduate students in the field of microelectronics, nanoelectronics, and electronics.
Fundamentals of Nanoscaled Field Effect Transistors Fundamentals of Nanoscaled Field Effect TransistorsCovers the fundamental principles behind nanoelectronics/microelectronics
Includes chapters devoted to solutions tackling the quantum mechanical effects occurring at nanoscale
Provides some case studies to understand the issue mathematically
Includes supplementary material: sn.pub/extras
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