Ion Beams in Materials Processing and Analysis - Prima edizione

EAN (ISBN-13): 9783211993552
ISBN (ISBN-10): 321199355X
Copertina rigida
Copertina flessibile
Anno di pubblicazione: 20131130
Editore: Springer Wien
320 Pagine
Peso: 0,739 kg
Lingua: Englisch

Libro nella banca dati dal 2011-07-21T14:58:58+02:00 (Zurich)
Pagina di dettaglio ultima modifica in 2023-08-17T14:15:13+02:00 (Zurich)
ISBN/EAN: 9783211993552

ISBN - Stili di scrittura alternativi:
3-211-99355-X, 978-3-211-99355-2
Stili di scrittura alternativi e concetti di ricerca simili:
Autore del libro : moeller bernd, bernd schmidt, klaus wetzig, bernd schmid, bernd möller
Titolo del libro: ion beam, ion beams materials processing and analysis, bea

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Dati dell'editore

Autore: Bernd Schmidt; Klaus Wetzig
Titolo: Ion Beams in Materials Processing and Analysis
Editore: Springer; Springer Wien
418 Pagine
Anno di pubblicazione: 2012-12-13
Vienna; AT
Stampato / Fatto in
Peso: 8,403 kg
Lingua: Inglese
192,59 € (DE)
197,99 € (AT)
212,50 CHF (CH)
POD
IX, 418 p.

BB; Surfaces and Interfaces, Thin Films; Hardcover, Softcover / Technik/Maschinenbau, Fertigungstechnik; Materialwissenschaft; Verstehen; Ion Beams; Materials processing and analysis; Atomic, Molecular, Optical and Plasma Physics; Surface and Interface Science, Thin Films; Surfaces, Interfaces and Thin Film; Atomic, Molecular and Chemical Physics; Surface and Interface and Thin Film; Atom- und Molekularphysik; Physik der kondensierten Materie (Flüssigkeits- und Festkörperphysik); BC; EA

Preface1. Introduction2. Fundamentals3. Ion Beam Technology3.1 Principles of Ion Accelerators3.1.1 Low Energy Ion Accelerators (Ion Implanters)3.1.2 High Energy Ion Accelerators3.2 Ion Sources3.2.1 Hot Filament (Hot Cathode) Ion Sources3.2.2 Cold Cathode Ion Source (Penning Ion Source)3.2.3 High Frequency (RF) Ion Source3.2.4 Duoplasmatron Ion Source3.2.5 Ion Sources for Electrostatic Accelerators3.2.6 Cesium Sputtering Ion Sources3.2.7 Field-Evaporation or Liquid Metal Ion Sources (LMIS)3.2.8 Beam Extraction from Ion Sources3.3 Ion Acceleration3.4 Ion Beam Handling3.4.1 Ion Mass Separation3.4.2 Ion Beam Focusing3.4.3 Ion Beam Scanning3.4.4 Ion Beam Current Measurement3.4.5 Ion Detection (Detectors, Spectrometers)3.5 Ion Implantation Systems3.5.1 Common Low Energy Beam Line Implanters3.5.2 Specialized Low Energy Beam Line Implanters3.5.3 High Energy Beam Line Implanters3.5.4 Plasma Based Ion Implanters (PBII)3.6 Electrostatic Ion Accelerator Systems3.6.1 Single-Stage Electrostatic Accelerators3.6.2 Two-Stage Electrostatic Accelerators3.7 Focused Ion Beam Systems3.7.1 Low Energy Focused Ion Beams3.7.2 High Energy Focused Ion Beams4. Materials Processing4.1 Ion Irradiation and Damage Annealing4.2 Ion Implantation into Semiconductors4.2.1 Ion Implantation into Silicon4.2.1.1 Advanced CMOS Technology4.2.1.2 Defect Engineering and Epi-Layer Replacing in High Power Devices4.2.1.3 Silicon Detector and Sensor Technology4.2.2 Ion Implantation into Germanium4.2.3 Ion Implantation into Compound Semiconductors4.2.3.1 III-V Semiconductors4.2.3.2 Group III-Nitride Materials4.2.3.3 Silicon Carbide4.3 Ion Beam Synthesis of New Phases in Solids4.3.1 Buried Insulating Layers in Silcon4.3.2 Ion Beam Synthesized Silicide Layers4.3.3 Ion Beam Synthesis of Nanocrystals in Insulators4.4 Ion Beam Mixing of Interfaces4.5 Ion Beam Slicing of Thin Layers (Smart-Cut for SOI and Solar Cells)4.6 Ion Beam Erosion, Sputtering and Surface Patterning (Ripples)4.7 Ion Beam Shaping of Nanomaterials4.8 Ion Beam Processing of other Materials (Metals, Insulators, Polymers...)4.8.1 Ion Implantation of Metals4.8.2 Ion Implantation into Polymers4.8.3 Ion Implantation into Insulating Optical Materials5. Ion Beam Preparation of Materials5.1 Displacement of Target Atoms by Sputtering5.2 Effects on Sputtering Yield5.2.1 Ion Energy and Ion Atomic Number5.2.2 Ion Incident Direction5.2.3 Selective Sputtering5.2.4 Targert Material5.2.5 Preferential Sputtering5.3 Ion Beam Induced Target Modifications5.3.1 Ion Beam Cleaning and Etching5.3.2 Ion Beam Induced Material Deposition5.3.3 Ion Beam Depth Profiling5.3.4 Ion Beam Cutting5.3.5 Ion Beam Thinning5.4 Focus Ion Beam (FIB) Preparation5.4.1 FIB Induced Cross Section Preparation 5.4.2 FIB Induced Thin Film Preparation5.4.3 Limiting Effects at FIB Preparation6. Ion Beam Analysis of Materials6.1 Ion- Solid State Interactions6.2 Ion Beam Analytical Techniques – a Survey6.3 Ion Beam Scattering Techniques6.3.1 Rutherford Backscattering (RBS)6.3.2 Medium Energy Ion Scattering (MEIS)6.3.3 Elastic Recoil Detection Analysis (ERDA)6.4 Ion Beam Induced Photon Emission6.4.1 Particle Induced X-Ray Emission (PIXE)6.4.2 Particle Induced γ-Ray Emission (PIGE)6.5 Nuclear Reaction Analysis (NRA)6.6 Ion Beam Induced Light and Electron Emission6.7 Secondary Ion Emission6.7.1 Dynamic Secondary Ion Mass Spectrometry (Dynamic SIMS)6.7.2 Static Secondary Ion Mass Spectrometry (Static SIMS)6.7.3 Sputtered Neutral Particle Mass Spectrometry (SNMS)6.8 Ion Beam Imaging Techniques6.8.1 Field Ion Microscopy6.8.2 Ion Microscopy with Stationary Beam6.8.3 Scanning Ion Microscopy7. Special Ion Beam Applications in Materials Analysis Problems7.1 Functional Thin Films and Layers7.1.1 Direct Study of Diffusion Pricesses in Amorphous Thin Layer Systems7.1.2 Nanoanalytical Investigations of Tunnelmagnetoresistance Layers7.2 Ion Beam Analysis in Art and Archeometry7.3 Special Applications in Life SciencesIndex7. Special Ion Beam Applications in Materials Analysis Problems7.1 Functional Thin Films and Layers7.1.1 Direct Study of Diffusion Pricesses in Amorphous Thin Layer Systems7.1.2 Nanoanalytical Investigations of Tunnelmagnetoresistance Layers7.2 Ion Beam Analysis in Art and Archeometry7.3 Special Applications in Life SciencesIndex