Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations - nuovo libro

EAN (ISBN-13): 9783642409059
ISBN (ISBN-10): 3642409059
Anno di pubblicazione: 2014
Editore: Springer Berlin

Libro nella banca dati dal 2014-03-11T15:22:05+01:00 (Zurich)
Pagina di dettaglio ultima modifica in 2022-05-14T15:57:31+02:00 (Zurich)
ISBN/EAN: 9783642409059

ISBN - Stili di scrittura alternativi:
3-642-40905-9, 978-3-642-40905-9
Stili di scrittura alternativi e concetti di ricerca simili:
Autore del libro : qin
Titolo del libro: calc, silicon, novel, cal, mechanica, mechanical properties

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Dati dell'editore

Autore: Rui-Qin Zhang
Titolo: SpringerBriefs in Molecular Science; Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations
Editore: Springer; Springer Berlin
66 Pagine
Anno di pubblicazione: 2013-11-22
Berlin; Heidelberg; DE
Lingua: Inglese
53,49 € (DE)
55,00 € (AT)
59,00 CHF (CH)
Available
VIII, 66 p. 31 illus., 15 illus. in color.

EA; E107; eBook; Nonbooks, PBS / Chemie/Theoretische Chemie; Quanten- und theoretische Chemie; Verstehen; Electron Transport; Energy Band Structures; Growth Mechanism; Phonon Transport; Silicon Nanotubes; Silicon Nanowires; Silicon Quantum Dots; Silicon nanostructure; Structural Stability; Surface engineering; C; Theoretical Chemistry; Nanotechnology; Nanophysics; Characterization and Analytical Technique; Chemistry and Materials Science; Nanotechnologie; Physik der kondensierten Materie (Flüssigkeits- und Festkörperphysik); Nanowissenschaften; Werkstoffprüfung; BC

In this volume, Prof. Zhang reviews the systematic theoretical studies in his group on the growth mechanisms and properties of silicon quantum dots, nanotubes and nanowires, including: mechanisms of oxide-assisted growth of silicon nanowires, energetic stability of pristine silicon nanowires and nanotubes, thermal stability of hydrogen terminated silicon nanostructures, size-dependent oxidation of hydrogen terminated silicon nanostructures, excited-state relaxation of hydrogen terminated silicon nanodots, and direct-indirect energy band transitions of silicon nanowires and sheets by surface engineering and straining. He also discusses the potential applications of these findings. This book will mainly benefit those members of the scientific and research community working in nanoscience, surface science, nanomaterials and related fields.

Introduction.- Growth mechanism of silicon nanowires.- Stability of silicon nanostructures.- Novel electronic properties of silicon nanostructures.- Summary and remarks.

Prof. Zhang is currently a professor at the Department of Physics and Materials Science, City University of Hong Kong. Prof. Zhang’s research area is Computational Materials Physics and Chemistry, including: (1) energetics, kinetics and dynamics of materials nucleation and growth; (2) nano- and micro-structures and related properties of systems in materials science, surface science and chemistry; and (3) development of related methodologies and theories. His recent research focus is on nanoscience, including interactions of nanomaterials with chemical and biological systems, aiming at promoting the applications of nanostructured materials in energy-related and chemical, biological and environmental areas. He has published over 260 papers in internationally refereed journals and 5 book chapters in the areas of Chemical Physics, Materials Science, Condensed Matter Physics and Surface Science. His work has been cited more than 4000 times and his H-index has reached 32. Prof. Zhang hasbeen honored with (1) a Third-class State Natural Science Award of China in 1997, (2) a First-class Award of Scientific and Technological Development of China in 1997, (3) a Friedrich Wilhelm Bessel Research Award (http://www.avh.de/en/programme/preise/index.htm) from the Alexander von Humboldt Foundation, Germany in 2004, and (4) a Second-class State Natural Science Award of China in 2005.

This book will mainly benefit those members of the scientific and research community working in nanoscience, surface science, nanomaterials and related fields.

Comprehensively shows the growth mechanisms and properties of silicon nanostructures Covers computational studies that address different aspects of the science and technology of silicon nanostructures Includes silicon quantum dots, nanotubes and nanowires Provides an atomic-level understanding of oxide-assisted growth and possible novel property engineering approaches for silicon nanostructures Includes supplementary material: sn.pub/extras