2016, ISBN: 9783662496817
[ED: Hardcover], [PU: Springer / Springer Berlin Heidelberg / Springer, Berlin], This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFE… Altro …
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ISBN: 9783662496817
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co… Altro …
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ISBN: 9783662496817
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co… Altro …
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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices (Springer Theses) - Prima edizione
2016, ISBN: 9783662496817
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Springer, Gebundene Ausgabe, Auflage: 1st ed. 2016, 73 Seiten, Publiziert: 2016-06-22T00:00:01Z, Produktgruppe: Buch, Hersteller-Nr.: 9783662496817, 1 kg, Chemie, Naturwissenschaften & Te… Altro …
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2016, ISBN: 9783662496817
[PU: Springer Berlin], Gepflegter, sauberer Zustand. 26476376/2, DE, [SC: 0.00], gebraucht; sehr gut, gewerbliches Angebot, 1st ed. 2016, Banküberweisung, Kreditkarte, PayPal, Internation… Altro …
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2016, ISBN: 9783662496817
[ED: Hardcover], [PU: Springer / Springer Berlin Heidelberg / Springer, Berlin], This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFE… Altro …
ISBN: 9783662496817
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co… Altro …
ISBN: 9783662496817
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co… Altro …
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices (Springer Theses) - Prima edizione
2016, ISBN: 9783662496817
edizione con copertina rigida
Springer, Gebundene Ausgabe, Auflage: 1st ed. 2016, 73 Seiten, Publiziert: 2016-06-22T00:00:01Z, Produktgruppe: Buch, Hersteller-Nr.: 9783662496817, 1 kg, Chemie, Naturwissenschaften & Te… Altro …
2016, ISBN: 9783662496817
[PU: Springer Berlin], Gepflegter, sauberer Zustand. 26476376/2, DE, [SC: 0.00], gebraucht; sehr gut, gewerbliches Angebot, 1st ed. 2016, Banküberweisung, Kreditkarte, PayPal, Internation… Altro …
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Informazioni dettagliate del libro - The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices (Springer Theses)
EAN (ISBN-13): 9783662496817
ISBN (ISBN-10): 366249681X
Copertina rigida
Anno di pubblicazione: 1
Editore: Springer
Libro nella banca dati dal 2016-03-08T20:29:30+01:00 (Zurich)
Pagina di dettaglio ultima modifica in 2024-04-10T22:42:19+02:00 (Zurich)
ISBN/EAN: 9783662496817
ISBN - Stili di scrittura alternativi:
3-662-49681-X, 978-3-662-49681-7
Stili di scrittura alternativi e concetti di ricerca simili:
Autore del libro : schottky
Titolo del libro: the source, mos, germanium, springer theses
Dati dell'editore
Autore: Zhiqiang Li
Titolo: Springer Theses; The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
Editore: Springer; Springer Berlin
59 Pagine
Anno di pubblicazione: 2016-06-22
Berlin; Heidelberg; DE
Stampato / Fatto in
Lingua: Inglese
53,49 € (DE)
54,99 € (AT)
59,00 CHF (CH)
POD
XIV, 59 p. 52 illus., 49 illus. in color.
BB; Hardcover, Softcover / Physik, Astronomie/Atomphysik, Kernphysik; Elektronische Geräte und Materialien; Verstehen; Elektrotechnik, Elektronik; Contact resistance; Thermal stability; Germanium-based MOSFET; Dopant segregation; Source and drain; Nickel germanide; Dopant activation; MOS device; Semiconductors; Electronic Circuits and Systems; Nanophysics; Condensed Matter Physics; Schaltkreise und Komponenten (Bauteile); Physik der kondensierten Materie (Flüssigkeits- und Festkörperphysik); Nanowissenschaften; EA; BC
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.Nominated as an Excellent Doctoral Dissertation by Peking University in 2014 Proposes innovative methods for addressing the challenges in the source/drain engineering of germanium nMOSFETs Experimentally demonstrates the methods’ effectiveness with regard to reducing parasitic resistance in the source/drain of germanium nMOSFETs Includes supplementary material: sn.pub/extras
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