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Planar Double-Gate Transistor: From technology to circuit - nuovo libro

ISBN: 9789048181087

Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called "scaling", has highlighted serious advantages as integration density, s… Altro …

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Planar Double-Gate Transistor From technology to circuit - Rozeau, Olivier (Herausgeber); Amara, Amara (Herausgeber)
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Rozeau, Olivier (Herausgeber); Amara, Amara (Herausgeber):

Planar Double-Gate Transistor From technology to circuit - edizione con copertina flessibile

2010, ISBN: 9048181089

edizione con copertina rigida

Softcover reprint of hardcover 1st ed. 2009 Kartoniert / Broschiert Spektroskopie, Spektrochemie, Massenspektrometrie, Technische Anwendung von elektronischen, magnetischen, optischen M… Altro …

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Planar Double-Gate Transistor From technology to circuit - Rozeau, Olivier (Herausgeber); Amara, Amara (Herausgeber)
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Rozeau, Olivier (Herausgeber); Amara, Amara (Herausgeber):
Planar Double-Gate Transistor From technology to circuit - edizione con copertina flessibile

2010

ISBN: 9048181089

edizione con copertina rigida

Softcover reprint of hardcover 1st ed. 2009 Kartoniert / Broschiert Spektroskopie, Spektrochemie, Massenspektrometrie, Technische Anwendung von elektronischen, magnetischen, optischen M… Altro …

Costi di spedizione:Versandkostenfrei innerhalb der BRD. (EUR 0.00) MARZIES.de Buch- und Medienhandel, 14621 Schönwalde-Glien
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Amara Amara:
Planar Double-Gate Transistor - edizione con copertina flessibile

ISBN: 9789048181087

Paperback, [PU: Springer], Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called "scaling", has highlighted serious advantages as integ… Altro …

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Planar Double-Gate Transistor - edizione con copertina flessibile

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Dettagli del libro
Planar Double-Gate Transistor: From technology to circuit

This book on Double-Gates devices and circuit is unique and aims to reinforce the synergy between the research activities on CMOS sub-32nm devices and the design of elementary cells. The goal is to point out how we can take advantage of new transistor structures to come up with new basic cells and concepts that exploit the electrical features of these new devices and the breakthrough they bring.Planar Double-Gate Transistor will mainly focus on SOI CMOS transistors, fully depleted with double independent planar Gates (Independent Planar Double Gates Transistors: IPDGT), a potential candidate for the sub-32 nm technological nodes as planned by the current ITRS Roadmap.

Informazioni dettagliate del libro - Planar Double-Gate Transistor: From technology to circuit


EAN (ISBN-13): 9789048181087
ISBN (ISBN-10): 9048181089
Copertina rigida
Copertina flessibile
Anno di pubblicazione: 2010
Editore: Springer
220 Pagine
Peso: 0,339 kg
Lingua: eng/Englisch

Libro nella banca dati dal 2011-09-23T09:14:23+02:00 (Zurich)
Pagina di dettaglio ultima modifica in 2024-04-15T13:00:01+02:00 (Zurich)
ISBN/EAN: 9789048181087

ISBN - Stili di scrittura alternativi:
90-481-8108-9, 978-90-481-8108-7
Stili di scrittura alternativi e concetti di ricerca simili:
Autore del libro : olivier, roze
Titolo del libro: gate, double, transistor circuit


Dati dell'editore

Autore: Amara Amara; Olivier Rozeau
Titolo: Planar Double-Gate Transistor - From technology to circuit
Editore: Springer; Springer Netherland
211 Pagine
Anno di pubblicazione: 2010-10-19
Dordrecht; NL
Stampato / Fatto in
Lingua: Inglese
160,49 € (DE)
164,99 € (AT)
177,00 CHF (CH)
POD
VIII, 211 p.

BC; Hardcover, Softcover / Technik/Elektronik, Elektrotechnik, Nachrichtentechnik; Schaltkreise und Komponenten (Bauteile); Verstehen; CMOS; Circuit Design; Compact modelling; Double-Gate MOSFET; Fully Depleted Silicon On Insulator; Leistungsfeldeffekttransistor; analog circuit design; analog design; digital design; field-effect transistor; integrated circuit; metal oxide semiconductur f; Electronic Circuits and Systems; Condensed Matter Physics; Spectroscopy; Optical Materials; Physik der kondensierten Materie (Flüssigkeits- und Festkörperphysik); Spektroskopie, Spektrochemie, Massenspektrometrie; Technische Anwendung von elektronischen, magnetischen, optischen Materialien; BB; EA

This book on Double-Gates devices and circuit is unique and aims to reinforce the synergy between the research activities on CMOS sub-32nm devices and the design of elementary cells. The goal is to point out how we can take advantage of new transistor structures to come up with new basic cells and concepts that exploit the electrical features of these new devices and the breakthrough they bring. Planar Double-Gate Transistor will mainly focus on SOI CMOS transistors, fully depleted with double independent planar Gates (Independent Planar Double Gates Transistors: IPDGT), a potential candidate for the sub-32 nm technological nodes as planned by the current ITRS Roadmap. The book topics are mainly focusing on: Detailed description of specific processes that allow the optimization of the CMOS IPDGT device CMOS IPDGT modeling, both compact and physical models are presented Device characterization Design of innovating cells (SRAM cells, basic digital & analog functions) with the objectives to improve the level of integration and the robustness to variability as well as the power consumption optimization, using the degree of freedom introduced by the independent gates.
First book dealing with Technology and Design Interaction Presents a cross-disciplinary based approach to optimize a new and complex technology Covers all aspects of IC Design with advanced technologies: process, device modelling, characterization, and circuit design of analogue, digital and memory circuits Introduces new circuit concepts taking benefit of the double-gate device structures

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