A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work present… Altro …
A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work presents a simple but effective method for growing epitaxial III-Nitride layers on crystalline germanium surfaces. Beside epitaxial III-Nitride growth, a method is introduced to obtain epitaxial Ge3N4 on germanium. Finally a novel method to produce high-quality germanium layers on silicon is introduced, allowing interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, Schottky contacts on germanium, and electrochemical measurements. Epitaxial Growth of Nitrides on Germanium Buch (fremdspr.) Bücher>Fremdsprachige Bücher>Englische Bücher, Asp Vub Pr<
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A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work present… Altro …
A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work presents a simple but effective method for growing epitaxial III-Nitride layers on crystalline germanium surfaces. Beside epitaxial III-Nitride growth, a method is introduced to obtain epitaxial Ge3N4 on germanium. Finally a novel method to produce high-quality germanium layers on silicon is introduced, allowing interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, Schottky contacts on germanium, and electrochemical measurements. Buch (fremdspr.) Ruben Lieten Taschenbuch, Asp Vub Pr, 01.09.2009, Asp Vub Pr, 2009<
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Nr. 18217686. Costi di spedizione:, Lieferbar innerhalb von 3 Wochen, DE. (EUR 0.00) Details...
(*) Libro esaurito significa che il libro non è attualmente disponibile in una qualsiasi delle piattaforme associate che di ricerca.
Paperback, [PU: VUB University Press], A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium o… Altro …
Paperback, [PU: VUB University Press], A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work presents a simple but effective method for growing epitaxial III-Nitride layers on crystalline germanium surfaces. Beside epitaxial III-Nitride growth, a method is introduced to obtain epitaxial Ge3N4 on germanium. Finally a novel method to produce high-quality germanium layers on silicon is introduced, allowing interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, Schottky contacts on germanium, and electrochemical measurements., Materials Science<
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(*) Libro esaurito significa che il libro non è attualmente disponibile in una qualsiasi delle piattaforme associate che di ricerca.
Paperback, [PU: VUB University Press], A comprehensive guide to the physical properties of III-Nitrides, which allow the fabrication of many devices such as high electron mobility transis… Altro …
Paperback, [PU: VUB University Press], A comprehensive guide to the physical properties of III-Nitrides, which allow the fabrication of many devices such as high electron mobility transistors and blue light emitting diodes, this work presents a simple but effective method for altering the fixed behavior of nitrides in order to obtain crystalline germanium on silicon--a timely exploration, as some research begins to turn toward the interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, and electrochemical measurements., Materials Science<
BookDepository.com
Costi di spedizione:Versandkostenfrei. (EUR 0.00) Details...
(*) Libro esaurito significa che il libro non è attualmente disponibile in una qualsiasi delle piattaforme associate che di ricerca.
A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work present… Altro …
A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work presents a simple but effective method for growing epitaxial III-Nitride layers on crystalline germanium surfaces. Beside epitaxial III-Nitride growth, a method is introduced to obtain epitaxial Ge3N4 on germanium. Finally a novel method to produce high-quality germanium layers on silicon is introduced, allowing interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, Schottky contacts on germanium, and electrochemical measurements. Epitaxial Growth of Nitrides on Germanium Buch (fremdspr.) Bücher>Fremdsprachige Bücher>Englische Bücher, Asp Vub Pr<
- No. 18217686. Costi di spedizione:, Lieferbar innerhalb von 3 Wochen, DE. (EUR 0.00)
A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work present… Altro …
A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work presents a simple but effective method for growing epitaxial III-Nitride layers on crystalline germanium surfaces. Beside epitaxial III-Nitride growth, a method is introduced to obtain epitaxial Ge3N4 on germanium. Finally a novel method to produce high-quality germanium layers on silicon is introduced, allowing interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, Schottky contacts on germanium, and electrochemical measurements. Buch (fremdspr.) Ruben Lieten Taschenbuch, Asp Vub Pr, 01.09.2009, Asp Vub Pr, 2009<
Nr. 18217686. Costi di spedizione:, Lieferbar innerhalb von 3 Wochen, DE. (EUR 0.00)
Paperback, [PU: VUB University Press], A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium o… Altro …
Paperback, [PU: VUB University Press], A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work presents a simple but effective method for growing epitaxial III-Nitride layers on crystalline germanium surfaces. Beside epitaxial III-Nitride growth, a method is introduced to obtain epitaxial Ge3N4 on germanium. Finally a novel method to produce high-quality germanium layers on silicon is introduced, allowing interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, Schottky contacts on germanium, and electrochemical measurements., Materials Science<
Paperback, [PU: VUB University Press], A comprehensive guide to the physical properties of III-Nitrides, which allow the fabrication of many devices such as high electron mobility transis… Altro …
Paperback, [PU: VUB University Press], A comprehensive guide to the physical properties of III-Nitrides, which allow the fabrication of many devices such as high electron mobility transistors and blue light emitting diodes, this work presents a simple but effective method for altering the fixed behavior of nitrides in order to obtain crystalline germanium on silicon--a timely exploration, as some research begins to turn toward the interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, and electrochemical measurements., Materials Science<
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A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work presents a simple but effective method for growing epitaxial III-Nitride layers on crystalline germanium surfaces. Beside epitaxial III-Nitride growth, a method is introduced to obtain epitaxial Ge3N4 on germanium. Finally a novel method to produce high-quality germanium layers on silicon is introduced, allowing interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, Schottky contacts on germanium, and electrochemical measurements.
Informazioni dettagliate del libro - Epitaxial Growth of Nitrides on Germanium
EAN (ISBN-13): 9789054874850 ISBN (ISBN-10): 9054874856 Copertina flessibile Anno di pubblicazione: 2009 Editore: Asp Vub Pr 162 Pagine Peso: 0,340 kg Lingua: eng/Englisch
Libro nella banca dati dal 2009-11-25T23:49:45+01:00 (Zurich) Pagina di dettaglio ultima modifica in 2021-11-13T20:34:10+01:00 (Zurich) ISBN/EAN: 9789054874850
ISBN - Stili di scrittura alternativi: 90-5487-485-6, 978-90-5487-485-0 Stili di scrittura alternativi e concetti di ricerca simili: Autore del libro : ruben, annick Titolo del libro: germanium, nitride
